Light-emitting device with a sealing film

ABSTRACT

A substrate ( 100 ) includes a resin material. A first stacked film ( 210 ) is configured by laminating multiple layers and is formed on a first surface ( 102 ) of the substrate ( 100 ). A light-emitting unit ( 140 ) is formed over the first stacked film ( 210 ) and includes an organic layer. A second stacked film ( 220 ) is configured by laminating multiple layers and covers the light-emitting unit ( 140 ). A third stacked film ( 310 ) is configured by laminating multiple layers and is formed on a second surface ( 104 ) of the substrate ( 100 ). The third stacked film ( 310 ) is the same stacked film as the first stacked film ( 210 ), and the fourth stacked film ( 320 ) is the same stacked film as the second stacked film ( 220 ).

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/551,872, filed on Aug. 17, 2017 which is a U.S. National Stage entryof PCT Application No. PCT/JP2015/054341, filed on Feb. 17, 2015. Thecontents of the foregoing are incorporated by reference.

TECHNICAL FIELD

The present invention relates to a light-emitting device.

BACKGROUND ART

In recent years, there has been progress in the development oflight-emitting devices having light-emitting units using organic EL(Organic Electroluminescence) elements. The organic EL element isconfigured of an organic layer interposed between a first electrode anda second electrode. Since the organic layer is easily affected bymoisture, oxygen or the like, the light-emitting unit needs to besealed. One of the ways to seal the light-emitting unit is by using asealing layer. Ways to form the sealing layer include gas phase filmformation methods such as ALD (Atomic Layer Deposition), CVD, sputteringor the like.

Meanwhile, using a resin substrate as a substrate of the organic ELelement is being considered. Using the resin substrate allows thelight-emitting unit to have flexibility. However, resin materialstransmit moisture. When moisture reaches the organic layer of theorganic EL element, the organic layer is deteriorated, attributing tothe moisture. To avoid such deterioration, forming a gas barrier filmover the resin substrate is considered. For example, Patent Document 1discloses a gas barrier film configured by laminating an inorganic filmand a stress relaxation film. The stress relaxation film is formed by anatmospheric plasma treatment. Moreover, Patent Document 1 describes thata sealing film for sealing the organic EL element may be formed in thesame way as the gas barrier film.

RELATED ART DOCUMENT Patent Document

[Patent Document 1]: WO 2006/067952

SUMMARY OF THE INVENTION

In a case where a substrate is made of resin, as described above, it isnecessary to form the gas barrier film. In addition, the sealing filmfor sealing the organic EL element is also formed over the substrate.Thus, multiple films are formed over a surface of the substrate wherethe organic EL element is formed. In this case, a stress originated bythe multiple films is applied to the substrate, thus increasing the riskof deformation of the substrate.

An example of the problem to be solved by the present invention is toreduce a stress applied to a substrate including a resin material onwhich an organic EL element is formed.

Means for Solving the Problem

The invention described in claim 1 is a light-emitting device including:

a substrate including a resin material;

a first stacked film formed on a first surface of the substrate andincluding plural stacked layers;

a light-emitting unit formed on the first stacked film and including anorganic layer;

a second stacked film covering the light-emitting unit and includingplural stacked layers;

a third stacked film formed on a second surface of the substrate andincluding plural stacked layers;

a fourth stacked film formed overlapping the third stacked film andincluding plural stacked layers,

in which the number of layers of the third stacked film is the same asthat of the first stacked film, and materials of respective ones of theplurality of layers constituting the third stacked film are the same asmaterials of respective ones of the plurality of layers of the firststacked film positioned in a laminating order corresponding to alaminating order of the third stacked film when counted from thesubstrate side, and

in which the number of layers of the fourth stacked film is the same asthat of the second stacked film, and materials of respective ones of theplurality of layers constituting the fourth stacked film are the same asmaterials of respective ones of the plurality of layers of the fourthstacked film positioned in a laminating order corresponding to alaminating order of the fourth stacked film when counted from thesubstrate side.

BRIEF DESCRIPTION OF THE DRAWINGS

The objects described above, and other objects, features and advantagesare further made apparent by suitable embodiments that will be describedbelow and the following accompanying drawings.

FIG. 1 is a cross-sectional view illustrating a light emitting deviceaccording to an embodiment.

FIG. 2 is a cross-sectional view illustrating a configuration of a firststacked film.

FIG. 3 is a cross-sectional view illustrating a configuration of asecond stacked film.

FIG. 4 is a diagram illustrating a configuration of a first stacked filmaccording to Modification Example 1.

FIG. 5 is a diagram illustrating a configuration of a second stackedfilm according to Modification Example 1.

FIG. 6 is a cross-sectional view illustrating a first stacked filmaccording to Modification Example 2.

FIG. 7 is a cross-sectional view illustrating a second stacked filmaccording to Modification Example 2.

FIG. 8 is a plan view illustrating a configuration of a light emittingdevice according to Example 1.

FIG. 9 is a diagram in which a second electrode and a second stackedfilm are removed from FIG. 8.

FIG. 10 is a diagram in which an organic layer and an insulating layerare removed from FIG. 9.

FIG. 11 is a cross-sectional view taken along line A-A of FIG. 8.

FIG. 12 is a plan view of a light emitting device according to Example2.

FIG. 13 is a diagram in which a partition wall, a second electrode, andan insulating layer are removed from FIG. 12.

FIG. 14 is a cross-sectional view taken along line B-B of FIG. 12.

FIG. 15 is a cross-sectional view taken along line C-C of FIG. 12.

FIG. 16 is a cross-sectional view taken along line D-D of FIG. 12.

FIG. 17 is an equivalent circuit diagram of a light-emitting device.

DESCRIPTION OF EMBODIMENT

Embodiments of the present invention will be described below byreferring to the drawings. Moreover, in all the drawings, the sameconstituent elements are given the same reference numerals, anddescriptions thereof will not be repeated.

FIG. 1 is a cross-sectional view illustrating a configuration of alight-emitting device 10 according to an embodiment. The light-emittingdevice 10 according to the embodiment includes a substrate 100, alight-emitting unit 140, a first stacked film 210, a second stacked film220, a third stacked film 310, and a fourth stacked film 320. Thesubstrate 100 includes a resin material. The first stacked film 210 isconfigured of multiple stacked layers and is formed on a first surface102 of the substrate 100. The light-emitting unit 140 is formed over thefirst stacked film 210 and includes an organic layer. The second stackedfilm 220 is configured of multiple stacked layers and covers thelight-emitting unit 140. The third stacked film 310 is configured ofmultiple stacked layers and is formed on a second surface 104 of thesubstrate 100. The fourth stacked film 320 is configured of multiplestacked layers and is formed overlapping the third stacked film 310. Inother words, the third stacked film 310 and the fourth stacked film 320are formed in this order over the second surface 104. The number oflayers in the third stacked film 310 is the same as that of the firststacked film 210, and respective materials of the multiple layersconstituting the third stacked film 310 are the same as respectivematerials of the multiple layers of the first stacked film 210, thelayers of the third stacked film 310 and the layers of the first stackedfilm 210 corresponding in the laminating order when counted from thesubstrate 100 side. Moreover, the number of layers of the fourth stackedfilm 320 is the same as that of the second stacked film 220, andrespective materials of the multiple layers constituting the fourthstacked film 320 are the same as respective materials of the multiplelayers of the second stacked film 220, the layers of the fourth stackedfilm 320 and the layers of the second stacked film 220 corresponding inthe laminating order when counted from the substrate 100 side. Adetailed description will be provided below.

The substrate 100 contains a resin material and transmits visible light.The substrate 100 is, for example, a resin substrate, and its thicknessis equal to or greater than 10 μm and equal to or less than 1,000 μm. Aresin used for the substrate 100 is, for example, PEN (polyethylenenaphthalate), PES (polyether sulfone), PET (polyethylene terephthalate),or polyimide.

The light-emitting unit 140 is formed on the first surface 102 of thesubstrate 100. The light-emitting unit 140 is configured by laminatingthe first electrode, the organic layer, and the second electrode in thisorder.

The first electrode is a transparent electrode having opticaltransparency. Materials of the transparent electrode are thosecontaining a metal, for example, a metal oxide such as ITO (Indium TinOxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide), ZnO(Zinc Oxide) or the like. The thickness of the first electrode is, forexample, equal to or greater than 10 nm and equal to or less than 500nm. The first electrode is formed, for example, by sputtering or vapordeposition. Meanwhile, the first electrode may be formed using aconductive organic material such as carbon nanotubes, PEDOT/PSS or thelike.

The organic layer has a light-emitting layer. The organic layer isconfigured by laminating, for example, a hole injection layer, alight-emitting layer, and an electron injection layer in this order. Ahole transporting layer may be formed between the hole injection layerand the light-emitting layer. In addition, an electron transportinglayer may be formed between the light-emitting layer and the electroninjection layer. The organic layer may be formed by vapor deposition.Further, at least one layer of the organic layer, for example, a layerin contact with the first electrode, may be formed by coating, such asink jetting, printing, spraying or the like. Meanwhile, in this case,the remaining layers of the organic layer are formed by vapordeposition. Further, all layers of the organic layer may be formed bycoating.

The second electrode includes, for example, a metal layer constituted ofa metal selected from a first group consisting of Al, Au, Ag (may be Agink or Ag nanowires), Pt, Mg, Sn, Zn, and In, or an alloy of metalsselected from the first group. In this case, the second electrode haslight shielding properties. The thickness of the second electrode is,for example, equal to or greater than 10 nm and equal to or less than500 nm. However, the second electrode may be formed using a materialwhich was exemplified as the material of the first electrode. The secondelectrode is formed by, for example, sputtering or vapor deposition.

In addition, the light-emitting unit 140 is sealed using the secondstacked film 220. The second stacked film 220 is configured bylaminating multiple layers. Each layer configuring the second stackedfilm 220 is an inorganic film and is formed by ALD (Atomic LayerDeposition).

In addition, the first stacked film 210 is formed on the first surface102 of the substrate 100, and the third stacked film 310 and the fourthstacked film 320 are formed over the second surface 104 of the substrate100 in this order. The first stacked film 210, the third stacked film310, and the fourth stacked film 320 are formed in order to inhibitmoisture from permeating the substrate 100, each film being configuredof multiple stacked layers. All of the layers are formed by ALD. Thefirst stacked film 210, the second stacked film 220, the third stackedfilm 310, and the fourth stacked film 320 are formed, for example, of aninorganic film.

Meanwhile, the third stacked film 310 and the first stacked film 210 areformed in the same process. Therefore, the number of layers of the thirdstacked film 310 and that of the first stacked film 210 are the same,and the respective materials of the multiple layers constituting thethird stacked film 310 are the same as the respective materials of themultiple layers of the first stacked film 210, the layers of the thirdstacked film 310 and the layers of the first stacked film 210corresponding in the laminating order when counted from the substrate100 side. Moreover, depending on manufacturing conditions, the thirdstacked film 310 may have the same configuration as the first stackedfilm 210, including the thickness of each layer.

Meanwhile, the fourth stacked film 320 and the second stacked film 220are formed in the same process. Therefore, the number of layers of thefourth stacked film 320 and that of the second stacked film 220 are thesame, and the respective materials of the multiple layers constitutingthe fourth stacked film 320 are the same as the respective materials ofthe second stacked film 220, the layers of the fourth stacked film 310and the layers of the second stacked film corresponding in thelaminating order when counted from the substrate 100 side. Moreover,depending on manufacturing conditions, the fourth stacked film 320 mayhave the same configuration as the second stacked film 220, includingthe thickness of each layer.

Meanwhile, a planarization layer (for example, an organic layer) may beprovided between the first surface 102 of the substrate 100 and thefirst stacked film 210. Moreover, a planarization layer may also beprovided between the second surface 104 of the substrate 100 and thethird stacked film 310.

FIG. 2 is a cross-sectional view illustrating a configuration of thefirst stacked film 210. The first stacked film 210 has a first layer 212and a second layer 214. The first layer 212 and the second layer 214are, for example, metal oxide films. Specifically, the first layer 212is formed using an aluminum oxide (Al2O3), and the second layer 214 isformed using a titanium oxide (TiO2). The thickness of each of the firstlayer 212 and the second layer 214 is equal to or greater than 3 nm andequal to or less than 10 nm. However, the thickness of each layer is notlimited to this range. Also, the first stacked film 210 may beconfigured by repeatedly laminating the first layer 212 and the secondlayer 214 in this order. Moreover, the first stacked film 210 may beconfigured by laminating once or multiple times three layers havingmaterials different from one another.

Meanwhile, as mentioned above, the third stacked film 310 also has aconfiguration illustrated in FIG. 2.

FIG. 3 is a cross-sectional view illustrating a configuration of thesecond stacked film 220. The second stacked film 220 is configured byrepeatedly laminating a first layer 222 and a second layer 224 multipletimes. For this reason, the second stacked film 220 is thicker than thefirst stacked film 210. By making the second stacked film 220 thickerthan the first stacked film 210, sealability of the second stacked film220 is improved. Meanwhile, the first layer 222 is formed using analuminum oxide (Al2O3), and the second layer 224 is formed using atitanium oxide (TiO2). A titanium oxide has insulating properties undera room temperature condition. However, for example, a titanium oxideobtains conductivity when made into a thin film. Each thickness of thefirst layer 222 and the second layer 224 is equal to or greater than 3nm and equal to or less than 10 nm. However, the thickness of theselayers is not limited to this range.

Meanwhile, as mentioned above, the fourth stacked film 320 also has aconfiguration illustrated in FIG. 3.

FIG. 4 illustrates a configuration of the first stacked film 210according to Modification Example 1. In the example illustrated in FIG.4, the first stacked film 210 is configured by repeatedly laminating thefirst layer 212 and the second layer 214, in this order. Any layer ofthe first stacked film 210 is thicker compared to other layersconfiguring the first stacked film 210. In the example illustrated inthe drawing, the uppermost layer of the first stacked film 210 (a layerfacing the light-emitting unit 140) is thicker compared to the otherlayers of the first stacked film 210. For example, the thickness of theuppermost layer of the first layer 212 is thicker by four times or morethan the thickness of the thickest layer out of the other layers. Inaddition, the thickness of the first layer 212 is, for example, equal toor greater than 20% and equal to or less than 80% of the thickness ofthe first stacked film 210.

Meanwhile, in a case where the first stacked film 210 has theconfiguration shown in FIG. 4, the third stacked film 310 also has theconfiguration shown in FIG. 4. In this case, a layer of the thirdstacked film 310 farthest from the second surface 104 of the substrate100 is thicker compared to the other layers of the third stacked film310.

FIG. 5 illustrates a configuration of the second stacked film 220according to Modification Example 1. In the example illustrated in thedrawing, the second stacked film 220 is configured by repeatedlylaminating the first layer 222 and the second layer 224, in this order.However, since the number of layers of the second stacked film 220 islarger than the number of layers of the first stacked film 210, thesecond stacked film 220 is thicker than the first stacked film 210.Moreover, any layer of the second stacked film 220 is thicker comparedto the other layers configuring the second stacked film 220. In theexample illustrated in FIG. 5, the first layer 222 at the bottom (thatis, a layer facing the light-emitting unit 140) is thicker compared tothe other layers configuring the second stacked film 220. For example,the thickness of the first layer 222 at the bottom is thicker by fourtimes or more than the thickness of the thickest layer out of the otherlayers. Moreover, the thickness of the first layer 222 is, for example,equal to or greater than 20% and equal to or less than 80% of thethickness of the second stacked film 220.

Meanwhile, in a case where the second stacked film 220 has theconfiguration illustrated in FIG. 5, the fourth stacked film 320 alsohas the configuration illustrated in FIG. 5. In this case, a layer ofthe fourth stacked film 320 closest to the substrate 100 is thickercompared to the other layers of the fourth stacked film 320.

FIG. 6 is a cross-sectional view illustrating the first stacked film 210according to Modification Example 2. The first stacked film 210according to Modification Example 2 has the same configuration as thefirst stacked film 210 shown in FIG. 4, except that a layer located atthe second or higher layer counted from the light-emitting unit 140 sideis thicker compared to the other layers of the first stacked film 210.Meanwhile, in a case where the first stacked film 210 has theconfiguration shown in FIG. 6, the third stacked film 310 also has theconfiguration shown in FIG. 6.

FIG. 7 is a cross-sectional view illustrating the second stacked film220 according to Modification Example 2. The second stacked film 220according to Modification Example 2 has the same configuration as thesecond stacked film 220 shown in FIG. 5, except that a layer located atthe second or higher layer counted from the substrate 100 side isthicker compared to the other layers of the second stacked film 220.Meanwhile, in a case where the second stacked film 220 has theconfiguration shown in FIG. 7, the fourth stacked film 320 also has theconfiguration shown in FIG. 7.

Meanwhile, the first stacked film 210 illustrated in FIG. 2 may be usedin combination with any second stacked film 220 illustrated in FIG. 3,FIG. 5, and FIG. 7. Moreover, the first stacked film 210 illustrated inFIG. 4 may be used in combination with any second stacked film 220illustrated in FIG. 3, FIG. 5, and FIG. 7. In addition, the firststacked film 210 illustrated in FIG. 6 may be used in combination withany second stacked film 220 illustrated in FIG. 3, FIG. 5, and FIG. 7.

FIG. 17 is an equivalent circuit diagram of a light-emitting device 10.In an example shown in the drawing, the light-emitting device 10 has afirst terminal 112 and a second terminal 132. The first terminal 112 isconnected to the first electrode of the light-emitting unit 140 throughan extraction interconnect 114, and the second terminal 132 is connectedto the second electrode of the light-emitting unit 140 through anextraction interconnect 134.

When the light-emitting unit 140 of the light-emitting device 10 emitslight, voltage is applied between a first extraction interconnect 114and a second extraction interconnect 134. Further, the first stackedfilm 210 is in contact with the first extraction interconnect 114 andthe second extraction interconnect 134. Moreover, the first stacked film210 is configured of multiple stacked layers. For this reason, whenshown in a equivalency circuit diagram, the first stacked film 210 isconfigured of a capacitor and a resistance connected in series betweenthe first extraction interconnect 114 and the second extractioninterconnect 134. Therefore, an electric current flows into the firststacked film 210 to a certain level, and as a result, when thelight-emitting unit 140 emits light, an electric charge is accumulatedin the first stacked film 210. This electric charge flows into thelight-emitting unit 140 even when voltage is no longer applied betweenthe first extraction interconnect 114 and the second extractioninterconnect 134. Due to the flowing electric charge, the response speedis decreased at turning off of the light-emitting unit 140. Moreover,when turning on the light-emitting unit 140, a part of the electriccurrent flows into the first stacked film 210. For this reason, theresponse speed is also decreased at turning on of the light-emittingunit 140.

In contrast, according to the present embodiment, at least a part oflayers in the first stacked film 210 is thicker than the other layersbetween the first extraction interconnect 114 and the second extractioninterconnect 134. For this reason, a resistance value in the equivalentcircuit diagram of FIG. 17 is increased. Therefore, an electric currentdoes not easily flow into the first stacked film 210, and as a result,the response speed of the light-emitting unit 140 is hardly decreased.When a layer of the first stacked film 210 closest to the light-emittingunit 140 is made thicker than the other layers, the electric currentdoes not easily flow particularly into the first stacked film 210.

Meanwhile, the description above also applies to the second stacked film220.

Next, a method of manufacturing the light-emitting device 10 isdescribed. First, the substrate 100 is prepared. Then, for example,using ALD, multiple inorganic layers are formed over the first surface102 of the substrate 100, thus forming the first stacked film 210 overthe first surface 102. Atoms or molecules which become a film throughALD also reach the second surface 104 of the substrate 100. In otherwords, ALD provides high coatability. Therefore, when forming the firststacked film 210 by ALD, the third stacked film 310 is formed on thesecond surface 104 of the substrate 100.

Thereafter, a first electrode, an organic layer, and a second electrodeof the light-emitting unit 140 are formed over the first stacked film210 of the substrate 100 in this order, thus forming the light-emittingunit 140. Meanwhile, terminals of the light-emitting unit 140 are alsoformed by the process.

Next, for example, multiple inorganic layers are formed both on thefirst stacked film 210 of the substrate 100 and on the light-emittingunit 140 by ALD, thus forming the second stacked film 220 serving as thesealing film on the first surface 102 and the light-emitting unit 140.Also, as mentioned above, ALD provides high coatability. For thisreason, when forming the second stacked film 220 by ALD, the fourthstacked film 320 is formed on the second surface 104 of the substrate100.

As explained above, according to the present embodiment, the firststacked film 210 and the second stacked film 220 are formed on the firstsurface 102 side of the substrate 100, and the third stacked film 310and the fourth stacked film 320 are formed on the second surface 104side of the substrate 100. The number of layers of the first stackedfilm 210 is the same as that of the third stacked film 310, andmaterials of respective ones of the multiple layers constituting thethird stacked film 310 are the same as materials of respective ones ofthe multiple layers of the first stacked film 210, the layers of thethird stacked film and the layers of the third stacked filmcorresponding in the laminating order when counted from the substrate100 side. Further, the number of layers of the fourth stacked film 320is the same as that the second stacked film 220, and materials ofrespective ones of the plural layers constituting the fourth stackedfilm 320 are the same as materials of respective ones of the plural oflayers of the second stacked film 220, the layers of the fourth stackedfilm and the layers of the second stacked film corresponding in thelaminating order when counted from the substrate 100 side. Thereby, astress originated in the first stacked film 210 and applied to thesubstrate 100 is canceled by a stress originated in the third stackedfilm 310 and applied to the substrate 100. Moreover, a stress originatedin the second stacked film 220 and applied to the substrate 100 iscanceled by a stress originated in the fourth stacked film 320 andapplied to the substrate 100. Consequently, the stress applied to thesubstrate 100 is reduced.

Particularly in the present embodiment, since the first stacked film 210and the third stacked film 310 are formed simultaneously by ALD,configurations thereof become the same as each other. Further, since thesecond stacked film 220 and the fourth stacked film 320 are formedsimultaneously by ALD, configurations thereof become the same as eachother. Consequently, the stress applied to the substrate 100 isparticularly reduced.

Meanwhile, since the fourth stacked film 320 functions as a barrier filmof the substrate 100, the risk of moisture permeating the substrate 100is further reduced.

EXAMPLE 1

FIG. 8 is a plan view illustrating a configuration of a light-emittingdevice 10 according to Example 1. A second stacked film 220 is indicatedby a dotted line in FIG. 8 for ease of explanation. FIG. 9 is a diagramin which a second electrode 130 and the second stacked film 220 areremoved from FIG. 8. FIG. 10 is a diagram in which an organic layer 120and an insulating layer 150 are removed from FIG. 9. FIG. 11 is across-sectional view along line A-A of FIG. 8.

In Example 1, the light-emitting device 10 is an illumination device andincludes a substrate 100 and a light-emitting unit 140. Thelight-emitting unit 140 includes a first electrode 110, an organic layer120, and a second electrode 130. Configurations of the first electrode110, the organic layer 120, and the second electrode 130 are asdescribed in the embodiment.

An edge of the first electrode 110 is covered by the insulating layer150. The insulating layer 150 is formed of a photosensitive resinmaterial, for example, a polyimide or the like and surrounds a portionof the first electrode 110 serving as a light-emitting region of thelight-emitting unit 140. By providing the insulating layer 150, it ispossible to inhibit the first electrode 110 and the second electrode 130from being short-circuited at the edge of the first electrode 110. Theinsulating layer 150 is formed, for example, by coating a resin materialserving as the insulating layer 150, and then exposing and developingthe resin material.

Moreover, the light-emitting device 10 has a first terminal 112 and asecond terminal 132. The first terminal 112 is connected to the firstelectrode 110, and the second terminal 132 is connected to the secondelectrode 130. The first terminal 112 and the second terminal 132include a layer formed of the same material as that of the firstelectrode, for example. Meanwhile, an extraction interconnect may beprovided between the first terminal 112 and the first electrode 110.Further, an extraction interconnect may be provided between the secondterminal 132 and the second electrode 130.

In addition, the light-emitting device 10 has a first stacked film 210,a second stacked film 220, a third stacked film 310, and a fourthstacked film 320. Configurations of the stacked films and the substrate100 are as described in the embodiment.

Next, a method of manufacturing the light-emitting device 10 isdescribed. First, the first stacked film 210 and the third stacked film310 are formed on the substrate 100. Then, the first electrode 110 isformed on the first stacked film 210, thereby also forming the firstterminal 112 and the second terminal 132. Then, the insulating layer150, the organic layer 120, and the second electrode 130 are formed inthis order. Thereafter, the second stacked film 220 and the fourthstacked film 320 are formed.

According to the present example, as is the case with the embodiment,stress applied to the substrate 100 may be reduced in the illuminationdevice that uses the light-emitting unit 140.

EXAMPLE 2

FIG. 12 is a plan view of a light-emitting device 10 according toExample 2. For ease of explanation, in FIG. 12, a second stacked film220 is indicated by a dotted line. FIG. 13 is a diagram in which apartition wall 170, a second electrode 130, an organic layer 120, and aninsulating layer 150 are removed form FIG. 12. FIG. 14 is across-sectional view along line B-B of FIG. 12, FIG. 15 is across-sectional view along line C-C of FIG. 12, and FIG. 16 is across-sectional view along line D-D of FIG. 12.

The light emitting device 10 according to the present embodiment is adisplay including a substrate 100, a first electrode 110, alight-emitting unit 140, an insulating layer 150, plural openings 152,plural openings 154, plural extraction interconnects 114, an organiclayer 120, a second electrode 130, plural extraction interconnects 134,and plural partition walls 170.

The first electrode 110 extends linearly in the first direction (in theY direction in FIG. 12). An end of the first electrode 110 is connectedto the extraction interconnect 114.

The extraction interconnect 114 is for connecting the first electrode110 to the first terminal 112. In an example shown in the drawing, a oneend side of the extraction interconnect 114 is connected to the firstelectrode 110 and the other end side of the extraction interconnect 114serves as the first terminal 112. In the example shown in the drawing,the first electrode 110 and the extraction interconnect 114 areintegral. A conductive layer 160 is formed on the extractioninterconnect 114. The conductive layer 160 is formed using a materialhaving resistance lower than that of the first electrode 110, and is,for example, Al. Meanwhile, the conductive layer 160 may have amultilayer structure. A part of the extraction interconnect 114 iscovered by the insulating layer 150.

The insulating layer 150 is, as shown in FIG. 12, and FIG. 14 to FIG.16, formed on plural first electrodes 110 and also in regionstherebetween. Plural openings 152 and plural openings 154 are formed inthe insulating layer 150. Plural second electrodes 130 extend inparallel to each other in a direction intersecting the first electrodes110 (for example, a direction orthogonal to X direction in FIG. 12). Thepartition wall 170, to be explained in detail later, extends between theplural second electrodes 130. Specifically, the plural openings 152 arealigned in a direction in the extending direction of the firstelectrodes 110 (Y direction in FIG. 12). Moreover, the plural openings152 are also aligned in the extending direction of the second electrodes130 (X direction in FIG. 12). Therefore, the plural openings 152 aredisposed so as to constitute a matrix.

The openings 154 are located in a region overlapping a one end side ofeach of the plural second electrodes 130 when seen in a planar view. Inaddition, the openings 154 are disposed along one side of the matrixconstituted by the openings 152. When seen in a direction along this oneside (for example, Y direction in FIG. 12, that is, a direction alongthe first electrodes 110), the openings 154 are disposed at apredetermined interval. A portion of the extraction interconnects 134are exposed from the openings 154. The extraction interconnects 134 areconnected to the second electrodes 130 through the openings 154.

The extraction interconnect 134 is for connecting the second electrode130 to the second terminal 132 and includes a layer constituted of thesame material as that of the first electrode 110. A one end side of theextraction interconnect 134 is located below the opening 154, and theother end side of the extraction interconnect 134 is extracted to theoutside of the insulating layer 150. In an example shown in FIG. 12, theother end side of the extraction interconnect 134 serves as the secondterminal 132. The conductive layer 160 is formed on the extractioninterconnect 134. Meanwhile, a portion of the extraction interconnect134 is covered by the insulating layer 150.

The organic layer 120 is formed in a region overlapping the openings152. A hole injection layer of the organic layer 120 is in contact withthe first electrode 110, and an electron injection layer of the organiclayer 120 is in contact with the second electrode 130. Therefore, thelight-emitting unit 140 is located in each region overlapping theopening 152.

Meanwhile, in each of examples shown in FIG. 14 and FIG. 15, each layerconfiguring the organic layer 120 protrudes to the outside of theopening 152. As shown in FIG. 12, the organic layer 120 may or may notbe continuously formed between the neighboring openings 152 in theextending direction of the partition wall 170. However, as shown in FIG.16, the organic layer 120 is not formed over the openings 154.

The second electrode 130 extends in a second direction (X direction inFIG. 12) intersecting the first direction as illustrated in FIG. 12 andFIG. 14 to FIG. 16. The partition wall 170 is formed between theneighboring second electrodes 130. The partition wall 170 extends inparallel to the second electrode 130, that is, in the second direction.The foundation of the partition wall 170 is, for example, the insulatinglayer 150. The partition wall 170 is a photosensitive resin such as, forexample, a polyimide-based resin and the like, formed in a predeterminedpattern by undergoing exposure and development. Meanwhile, the partitionwall 170 may also be constituted of a resin, for example, an epoxy resinor an acrylic resin which are not polyimide-based, or an inorganicmaterial such as a silicon dioxide or the like.

The cross-sectional shape of the partition wall 170 is a trapezoidturned upside down (an inverted trapezoid). That is, the width of theupper surface of the partition wall 170 is larger than the width of thelower surface thereof. For this reason, when the partition walls 170 areformed before the second electrodes 130, plural second electrodes 130can be formed at one time on one surface side of the substrate 100 byvapor deposition or sputtering. Moreover, the partition walls 170 have afunction of partitioning the organic layer 120.

Also in the present example, the first stacked film 210 and the secondstacked film 220 are formed on the first surface 102 of the substrate100, and the third stacked film 310 and the fourth stacked film 320 areformed on the second surface 104 of the substrate 100. The secondstacked film 220 seals the light-emitting unit 140. Meanwhile, in thepresent example, the first terminal 112 and the second terminal 132 aredisposed along the same side of the substrate 100. For this reason, inthe second stacked film 220, an opening for exposing the first terminal112 and an opening for exposing the second terminal 132 are connected toeach other.

Next, a method of manufacturing the light-emitting device 10 in thepresent example is explained. First, the first stacked film 210 and thethird stacked film 310 are formed on the substrate 100. Thesemanufacturing steps are as shown in the embodiment.

Next, the first electrode 110, the extraction interconnect 114, and theextraction interconnect 134 are formed on the first surface 102 of thesubstrate 100. The conductive layer 160 is thereafter formed on theinterconnect 114 and the interconnect 134. Next, the insulating layer150 is formed, and moreover, the partition wall 170 is formed. Theorganic layer 120 and the second electrode 130 are then formed. Thesemanufacturing steps are the same as Example 1.

Next, the second stacked film 220 and the fourth stacked film 320 areformed over the substrate 100. These manufacturing steps are as shown inthe embodiment.

According to the present example, as with the embodiment, stress appliedto the substrate 100 can be reduced in the display that utilizes thelight-emitting unit 140.

The embodiments and the examples are described above referring to thedrawings, but these are examples of the present invention and variousconfigurations other than those described above can be employed.

The invention claimed is:
 1. A light-emitting device comprising: asubstrate; an organic EL element disposed over a first surface of thesubstrate, the organic EL element comprising a first electrode, anorganic layer, and a second electrode laminated in this order from thefirst surface of the substrate; a first inorganic layer comprising a Tiatom; an interconnect disposed over the first surface and electricallyconnected to the second electrode; and a second inorganic layer,wherein, in a cross section comprising a portion where the interconnectis disposed, the substrate, the first inorganic layer, the interconnect,second electrode, and the second inorganic layer are arranged in order,and the substrate, the first inorganic layer, the interconnect, thesecond electrode, and the second inorganic layer are arranged in athickness direction of the substrate.
 2. The light-emitting deviceaccording to claim 1, further comprising: a conductive layer disposedbetween the interconnect and the second electrode in the thicknessdirection of the substrate.
 3. The light-emitting device according toclaim 2, wherein the conductive layer comprises an Al atom.
 4. Thelight-emitting device according to claim 1, further comprising: aninsulating layer between a plurality of the interconnects arranged in adirection parallel to the first surface in the cross section includingthe portion where the interconnect is disposed.
 5. The light-emittingdevice according to claim 4, wherein a part of the interconnect iscovered by the insulating layer in the thickness direction of thesubstrate.
 6. The light-emitting device according to claim 1, whereinthe second inorganic layer is thicker than the first inorganic layer inthe thickness direction of the substrate.
 7. The light-emitting, deviceaccording to claim 1, wherein the first inorganic layer is formed usinga titanium oxide.
 8. The light-emitting device according to claim 1,further comprising: a third inorganic layer disposed over a secondsurface of the substrate opposite to the first surface in the thicknessdirection of the substrate.
 9. The light-emitting device according toclaim 8, further comprising: a fourth inorganic layer stacked over thethird inorganic layer.
 10. The light-emitting device according to claim9, wherein each of the first inorganic layer, the second inorganiclayer, the third inorganic layer, and the fourth inorganic layercomprises multiple stacked layers.
 11. The light emitting device ofclaim 1, wherein the substrate comprises a resin material; the firstinorganic layer comprises a first stacked film formed on the firstsurface of the substrate, the first stacked film comprising a pluralityof stacked layers, wherein the first stacked film is a stacked filmformed by repeatedly stacking a first layer and a second layer aplurality of times, wherein the second layer has a material differentfrom that of the first layer, and wherein at least one of the firstlayer is thicker than another first layer and the second layers; theorganic EL element formed on the first stacked film; the secondinorganic layer comprise a second stacked film covering the organic ELelement and comprising a plurality of stacked layers; a third stackedfilm formed on a second surface of the substrate and comprising aplurality of stacked layers; a fourth stacked film formed overlappingthe third stacked film and comprising a plurality of stacked layers,wherein the number of layers of the third stacked film is the same asthat of the first stacked film, and materials of respective ones of theplurality of layers constituting the third stacked film are the same asmaterials of respective ones of the plurality of layers of the firststacked film positioned in a laminating order corresponding to alaminating order of the third stacked film when counted from thesubstrate side, and wherein the number of layers of the fourth stackedfilm is the same as that of the second stacked film, and materials ofrespective ones of the plurality of layers constituting the fourthstacked film are the same as materials of respective ones of theplurality of layers of the second stacked film positioned in alaminating order corresponding to a laminating order of the fourthstacked film when counted from the substrate side.
 12. Thelight-emitting device according to claim 11, wherein, when counted fromthe substrate side, the third stacked film is the same as the firststacked film, and the fourth stacked film is the same as the secondstacked film.
 13. The light-emitting device according to claim 11,wherein the second stacked film is thicker than the first stacked filmand the fourth stacked film is thicker than the third stacked film. 14.The light-emitting device according to claim 11, wherein all theplurality of the stacked layers in the first stacked film, all theplurality of the stacked layers in the second stacked film, all theplurality of the stacked layers in the third stacked film, and all theplurality of the stacked layers in the fourth stacked film are inorganicfilms.
 15. The light emitting device of claim 1, wherein: the firstinorganic layer comprises a first stacked film comprising a plurality ofstacked layers; and the second inorganic layer comprises a secondstacked film comprising a plurality of stacked layers, wherein the firststacked film, the organic EL element, and the second stacked film are onthe first surface of the substrate comprising a resin material in thisorder, wherein the first stacked film is a stacked film formed byrepeatedly stacking a first layer and a second layer a plurality oftimes, wherein the second layer has a material different from that ofthe first layer, wherein at least one or the first layer s thicker thananother first layer and the second layers, a third stacked filmcomprising a plurality of stacked layers, and a fourth stacked filmcomprising a plurality of stacked layers, wherein the third stacked filmand the fourth stacked film are on a second surface of the substrate inthis order, wherein each of the plurality of stacked layers of the thirdstacked film contains the same material as each of the plurality oflayers of the first stacked film, and the plurality of layers of thethird stacked film are in the same order with the plurality of layers ofthe first stacked film when counted from the substrate, wherein each ofthe plurality of stacked layers of the fourth stacked film contains thesame material as each of the plurality of layers of the second stackedfilm, and the plurality of layers of the fourth stacked film are in thesame order with the plurality of layers of the second stacked film whencounted from the substrate.
 16. The light emitting device according to,claim 15, wherein the number of layers of the third stacked film is thesame as that of the first stacked film, and the number of layers of thefourth stacked film is the same as that of the second stacked film.